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| CMXT2207 SURFACE MOUNT DUAL COMPLEMENTARY SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXT2207 type is a dual complementary silicon transistor manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, and designed for small signal general purpose and switching applications. MARKING CODE: X07 SOT-26 CASE MAXIMUM RATINGS: (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance NPN SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg JA 75 40 6.0 600 350 -65 to +150 357 PNP 60 60 5.0 UNITS V V V mA mW C C/W ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25C unless otherwise NPN SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=60V 10 ICBO VCB=50V ICBO VCB=60V, TA=125C 10 ICBO VCB=50V, TA=125C IEBO VEB=3.0V 10 ICEV VCE=60V, VEB=3.0V 10 ICEV VCE=30V, VBE=0.5V BVCBO IC=10A 75 BVCEO IC=10mA 40 BVEBO IE=10A 6.0 VCE(SAT) IC=150mA, IB=15mA 0.3 VCE(SAT) IC=500mA, IB=50mA 1.0 VBE(SAT) IC=150mA, IB=15mA 0.6 1.2 VBE(SAT) IC=500mA, IB=50mA 2.0 hFE VCE=10V, IC=0.1mA 35 hFE VCE=10V, IC=1.0mA 50 hFE VCE=10V, IC=10mA 75 hFE VCE=10V, IC=150mA 100 300 hFE VCE=1.0V, IC=150mA 50 hFE VCE=10V, IC=500mA 40 fT VCE=20V, IC=20mA, f=100MHz 300 fT VCE=20V, IC=50mA, f=100MHz - noted) PNP MIN MAX 10 10 50 60 60 5.0 0.4 1.6 1.3 2.6 75 100 100 100 300 50 200 - UNITS nA nA A A nA nA nA V V V V V V V MHz MHz R3 (12-February 2010) CMXT2207 SURFACE MOUNT DUAL COMPLEMENTARY SILICON TRANSISTORS ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (TA=25C unless otherwise noted) NPN PNP SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS Cob VCB=10V, IE=0, f=1.0MHz 8.0 8.0 pF Cib VEB=0.5V, IC=0, f=1.0MHz 25 pF Cib VEB=2.0V, IC=0, f=1.0MHz 30 pF hie VCE=10V, IC=1.0mA, f=1.0kHz 2.0 8.0 k hie VCE=10V, IC=10mA, f=1.0kHz 0.25 1.25 k hre VCE=10V, IC=1.0mA, f=1.0kHz 8.0 x10-4 hre VCE=10V, IC=10mA, f=1.0kHz 4.0 x10-4 hfe VCE=10V, IC=1.0mA, f=1.0kHz 50 300 hfe VCE=10V, IC=10mA, f=1.0kHz 75 375 hoe VCE=10V, IC=1.0mA, f=1.0kHz 5.0 35 S hoe VCE=10V, IC=10mA, f=1.0kHz 25 200 S rb'Cc VCB=10V, IE=20mA, f=31.8MHz 150 ps NF VCE=10V, IC=100mA, RS=1.0k, f=1.0kHz 4.0 dB ton VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA 45 ns td VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA 10 10 ns tr VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA 25 40 ns toff VCC=6.0V, IC=150mA, IB1=IB2=15mA 100 ns ts VCC=30V, IC=150mA, IB1=IB2=15mA 225 ns ts VCC=6.0V, IC=150mA, IB1=IB2=15mA 80 ns tf VCC=30V, IC=150mA, IB1=IB2=15mA 60 ns tf VCC=6.0V, IC=150mA, IB1=IB2=15mA 30 ns SOT-26 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter Q1 2) Base Q1 3) Collector Q2 4) Emitter Q2 5) Base Q2 6) Collector Q1 MARKING CODE: X07 R3 (12-February 2010) w w w. c e n t r a l s e m i . c o m |
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